报告摘要: The a-Si/Al layered structures as important contacts in semiconductor devices have been investigated intensively with respect to temperature-annealing effects. Among these effects, diffusion, aluminum-induced crystallization of a-Si and subsequent layer exchange occurring upon low-temperature annealing a-Si/Al layered structures have been attracted much attention. During the past few years, these three temperature-annealing effects have been investigated systematically by employing a complementary set of characterizing techniques. It follows that upon annealing (i) diffusion process is initiated by Si diffusing into the Al sublayer along Al grain boundaries in the Al phase not Al diffusing into the a-Si sublayer; (ii) aluminum-induced crystallization of amorphous Si takes place only at the Al grain boundaries in the Al phase not at the a-Si/Al interface; (iii) aluminum-induced layer exchange is realized by lateral growth of Si grains formed within the Al sublayer. Interface thermodynamics is applied for quantitatively understanding the above experimental observations.

报告人简介：
王江涌教授1984年毕业于武汉大学物理系， 1998年在南非University of the Free State 物理系获得博士学位， 其后在南非University of the Free State， 美国Kansas State University和德国的马普所作博士后和客座研究人员。现为汕头大学物理系特聘教授。

联系人：2009年中关村论坛主持人 曹则贤研究员(82649136)