报告摘要: Understanding and controlling the magnetic properties of nanoscale systems is crucial for the implementation of future data storage and computation paradigms. I will discuss how the magnetic properties of individual atoms can be probed with a low-temperature, high-field scanning tunneling microscope when the atoms are placed on a thin insulator. We find clear evidence of magnetic anisotropy in the spin excitation spectra of individual magnetic atoms embedded in a non-magnetic surface. In extended one-dimensional spin chains, which we built one atom at a time, we find strong spin-coupling into collective quantum-spins, even for the longest chains of length 3.5nm. When magnetic atoms are transferred to an otherwise non-magnetic tip, spin-polarized tunneling currents can be obtained and these can be used to efficiently pump spin systems out of thermal equilibrium.

报告人简介：
Dr. Andreas Heinrich is a member of the research staff at the IBM Almaden Research Center in San Jose, CA. He is the project leader for scanning probe microscopy. The experiments conducted by Dr. Heinrich’s group aim to extend the basic knowledge about the physics, chemistry, and materials properties of atomic-scale structures with a focus on exploring potential applications of nanostructures for atomic-scale logic and data-storage. Heinrich joined the IBM research group of Dr. Donald Eigler as a postdoctoral researcher in 1998 where he built a next-generation low-temperature scanning tunneling microscope operating at temperatures below 1K and in high magnetic fields. In January 2005, Heinrich took over the leadership of the STM lab from Dr. Eigler. Heinrich is devoted to educating the general public about the excitement of nanotechnology through hands-on demonstrations, is the author or co-author of papers published in the highest-ranking international journals and has given over 50 invited talks at international conferences. Heinrich received his PhD in 1998 from the University of Goettingen in Germany where he studied the materials properties of ternary compound semiconductors.

联系人：高鸿钧研究员（82648035）