Kerr nonlinearity induced four-wave mixing of CMOS-compatible PECVD deposited ultra-Si-rich-nitride
第一作者:
Cong, Hui
刊物名称:
JOURNAL OF APPLIED PHYSICS
论文题目:
Kerr nonlinearity induced four-wave mixing of CMOS-compatible PECVD deposited ultra-Si-rich-nitride
发表年度:
2020