地点: 中国科学院物理研究所M楼234报告厅

University of Utah

报告摘要:

An excitonic insulator (EI) phase can be stabilized in narrow-gap semiconductors/semimetals when spontaneously formed excitons, bound bosonic pairs of electrons and holes, condense at low temperatures. The search for excitonic Bose-Einstein condensate (BEC) in intrinsic semiconductors has received tremendous attention in the past decade, but so far convincing evidence remains lacking. Several material candidates have been recently proposed computationally, but these studies are limited to single exciton calculations and the simplified effects of interactions. In this talk, I will discuss our recent work investigating the role of topological flat bands (FBs) in promoting excitonic BEC. These works significantly enriches FB and excitonic physics while providing a unique platform for material realization of spinor BEC and spin superfluidity.

报告人简介：

Feng Liu is the Distinguished and Ivan B. Cutler Professor in the Department of Materials Science and Engineering at University of Utah. His research interests lie in the theoretical modeling and computer simulation, from electronic to atomic and to mesoscopic scales, to study a wide spectrum of physical behavior of materials, with a special focus on surfaces/interfaces, thin films and low-dimensional materials. His research has resulted in over 365 refereed publications and received over 25,000 citations. He is recipient of 2023 Davisson-Germer Prize in Surface Physics. He is a fellow of American Physical Society. He served as Divisional Associated Editor of Physical Review Letters and was recognized as Outstanding Referee for Physical Review journals. He is the founding editor-in-chief of Coshare Science.

联系人：胡江平 研究员    （8264 9818）

          高鸿钧 研究员    （8264 8035）