联系人： 李源 研究员
报告摘要：
Electrical control of quantum magnetic states is essential for both academic interest and next-generation spintronic device applications, which is one central focus of quantum materials and devices. Very recently, 2D van-der-Waals (vdW) magnetic materials have rapidly flourished to become star members in the field of 2D materials and device physics, providing enormous opportunities to open and advance diverse research directions from fundamental physics to device applications [1]. One particular direction is the vdW magnets and spintronics, involving several important concepts such as the current-driven spin-orbit torque (SOT), twisting spintronics, quantum and band/magnetic topology, etc. An ideal SOT magnetic memory requires not only the low switching current density and power dissipation, but also the magnetic-field-free switching, which allows for high density, high scalability, fast speed, low energy cost, and easy operation. vdW magnet, e.g., ferromagnet (FM) Fe3GeTe2 (FGT), has been established as a good platform for various SOT physics and quantum devices [1-11]. Besides FM, antiferromagnet (AFM) spintronics has three merits: no stray field; ultrafast THz spin dynamics; weakly coupled to the magnetic field. Unfortunately, electrically writing and reading an AFM is extremely challenging [8,9,11], and it is unknown whether current can control some unique types of exotic noncollinear spin textures, e.g., the helical spin texture and topological spin chirality, etc.
In this presentation, firstly, I will show you our discovery of current-driven gigantic intrinsic self-spin-orbit torque [2,5] in FM of FGT, and then several cases of spintronic application, including novel field-free switching [3,4,7,10]. Secondly, I will present how one can electrically alter the spin texture of exotic AFM [8,11]. Finally, I introduce several extended broad spintronic examples such as ionic gating-tuned magnetic topology [9], heterostructure-created emergent interfacial AFM states [6], and twisting spintronics-enabled emergent giant topological Hall effect [10].
References
[1] J.-G. Park*, K. Zhang et al., Rev. Mod. Phys. 98, 025003 (2026). [2] K. Zhang* et al., Adv. Mater. 33, 2004110 (2021). [3] K. Zhang* et al., Adv. Funct. Mater. 31, 2105992 (2021). [4] J. Cui†, K. Zhang†* et al., Adv. Electron. Mater. 10, 2400041 (2024). [5] K. Zhang* et al., Adv. Mater. 36, 2312824 (2024). [6] X Wang† et al., K. Zhang†*, ACS Nano 19, 8108 (2025). [7] J. Keum†, K. Zhang†* et al., Adv. Mater. 37, 2412037 (2025). [8] K. Zhang* et al., Phys. Rev. Lett. 134, 176701 (2025). [9] J. Kim, K. Zhang* et al., Nat. Commun. 16, 8943 (2025). [10] H. Kim, K. Zhang†* et al., Nat. Commun. 17, 2931 (2026). [11] K. Zhang* et al., Adv. Mater. 38, e22943 (2026)
报告人简介：
Dr. Kai-Xuan Zhang graduated from University of Science and Technology of China (USTC), and is now working as a research professor at Prof. Je-Geun Park’s lab at Seoul National University (SNU). His major research interest focuses on quantum materials and devices, particularly 2D vdW magnets. By using quantum transport and optics, he investigates the vdW magnet spintronics and spin-orbit torque memory etc., and light-matter interaction. Recently, he has been selected as an IOP Emerging Leader (2023), and delivered invited talks at renowned APS March Meeting (2024, 2026), MRS (2021), APPC (2025) conferences among others. So far, he has published more than 27 papers, including first/corresponding/leading-authored publications in Reviews of Modern Physics, Physical Review Letters, Advanced Materials (×4), Nature Communications (×2), ACS Nano, Nano Letters, Advanced Functional Materials with 2 patents in spin-orbit torque devices. He frequently serves as an active independent peer reviewer for international journals, including Nature, Nature Communications, Physical Review Letters, Newton, Advanced Materials, ACS Nano, Nano Letters, and Advanced Functional Materials, etc.